IPM International Perforation Management
Thailand |
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| Twin frequency switching converter |
(Product Photo) |
| | Twin frequency switching converter
Introduction
high-tech operate engineering company IPM develops and patent grand DE10328937 a dual high power, high voltage, medium frequency switching converter unit which works with hybrid drives, compact EMI safe semiconductor power electronic stages, supporting capacitors and high voltage ferrite transformers to generate ultra short high voltage pulses and sparking burst groups.
Advantages are based on uses of standard circuits with extended semiconductors for e.g. cluster micro perforation, corona substrate treatment, ac-ac, ac-dc converter, drive units, frequency, upward or downward converters, power electronics supplies, etc.
IPM is looking for science, industrial, power electronics partners who are interested in a licence agreement, technical cooperation for other wide application fields.
Working principle
Industry application of electrostatic perforation, AC-AC, AC-DC, converting, drives or others uses IGBT, MOSFET, HVFET semiconductor power stages. That circuits are working as upward converters with extremely short power pulses from 200 nano up to 15 micro second, high current peaks up to 300 Amps by du/ dt of 1500V/ µ s on a serial connected inductivity and loading condenser where the secondary ferrite transformer coils supply sparking electrodes up to 50 KVss as a permanent open loop and short circuit condition.
A safety circuit logic and two hybrid drivers allows a alternately switching of semiconductor A and B which generating consequently higher operation frequencies and power levels meanwhile electrical and thermal conditions remains on each in the same range as in single switching status.
In conclusion: approximately double frequency and power level condition obtains higher switching efficiencies, more perforation power, higher corona treatment level, powerful drives, frequency converters etc. depends of industry applications.
Advantages
Dual IGBT, HVFET or MOSFET semiconductors in high power, high current, high voltage circuits obtains in electrostatic nano or micro cluster perforation, surface treatment, surface modifications, corona treatment, converters, drives or other switching application frequencies up to 250 KHz, 1400 V/ ce, power levels up to 30 KW and more. Higher power efficiencies and lower switching losses are further advantages.
The precise pulse timing by a certain time window with constant or variable frequency generates with high voltages sparking holes sizes and sequences through the fast moving material webs.
Repeat frequencies of the entire circuit can up to the double switching frequency of each semiconductor.
For example by electrostatic micro cluster perforation in permeability ranges from 80 C.U. up to 2500 C.U., paper web speeds up to 450 m/ min and web widths up to 2000 mm are archive able.
Other applications
Corona treatment units, Plasma jet control, heavy Ion research, high power switching devices, power supplies, AC/ DC power drives, AC/ DC or AC/ AC converters, laser diode supplies, compact switching systems, frequency converter, emergency power supplies, etc.
The new twin semiconductor circuit enables applications with hybrid drives, semiconductor high voltage levels, upward, downward or other converters which operate with supporting capacitors, high voltage ferrite transformers in extremely compact and modular design. Several advantages are the high efficiency of pulse power transmission and energy ratios. E.g. traditional corona or other medium frequency generators of 30 KHz operation range are now easy to modify up to 60 KHz by double power level switching conditions and 60 KW.
Patent grand for process and device DE10328937 of IGBT power switching unit.
Future prospects
Our highly modern, industrially approved technology operation which even can be relied on when operated 24/ 7 can be integrated into existing rewinding machines devices or systems. Also, they can be used as completely independent production machines. New ranges of applications will be made accessible as new products with special features will be developed. | | |
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